Inventor · Campbell, CA, US

Daniel Ng

64Patents
13h-index
30Co-inventors
84Inventor score

Filing activity: Aug 4, 1997 → Oct 9, 2018

Most-cited inventions

PatentTitleAreaCited byStatus
US5929481A High density trench DMOS transistor with trench bottom implant Electricity 175 Expired
US5912490A MOSFET having buried shield plate for reduced gate/drain capacitance Electricity 88 Expired
US5898198A RF power device having voltage controlled linearity Electricity 41 Expired
US6107160A MOSFET having buried shield plate for reduced gate/drain capacitance Electricity 36 Expired
US8753935B1 High frequency switching MOSFETs with low output capacitance using a depletable P-shield Electricity 29 Active
US8431470B2 Approach to integrate Schottky in MOSFET Electricity 28 Active
US7436022B2 Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout Electricity 23 Active
US8946816B2 High frequency switching MOSFETs with low output capacitance using a depletable P-shield Electricity 19 Active
US7504676B2 Planar split-gate high-performance MOSFET structure and manufacturing method Electricity 17 Active
US7943989B2 Nano-tube MOSFET technology and devices Electricity 17 Active
US8828857B2 Approach to integrate Schottky in MOSFET Electricity 16 Active
US8785278B2 Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact Electricity 15 Active
US7799646B2 Integration of a sense FET into a discrete power MOSFET Electricity 14 Active
US9252264B2 High frequency switching MOSFETs with low output capacitance using a depletable P-shield Electricity 13 Active
US9484452B2 Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs Electricity 11 Active
US7902604B2 Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection Electricity 11 Active
US8779510B2 Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts Electricity 11 Active
US9502554B2 High frequency switching MOSFETs with low output capacitance using a depletable P-shield Electricity 10 Active
US8399925B2 Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET and method Electricity 10 Active
US8748268B1 Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching Electricity 10 Active
US8785270B2 Integrating schottky diode into power MOSFET Electricity 9 Active
US8174283B2 Calibration technique for measuring gate resistance of power MOS gate device at wafer level Electricity 9 Active
US8759908B2 Two-dimensional shielded gate transistor device and method of manufacture Electricity 8 Active
US8502302B2 Integrating Schottky diode into power MOSFET Electricity 8 Active
US9006053B2 Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching Electricity 8 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.