Patent · US Expired

Method of reducing loading variation during etch processing

US5899706A · kind A · utility

29Cited by
5References
1Claims
0Family size

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Key dates

Filing dateJun 30, 1997
Grant dateMay 4, 1999
Priority date
Expiry dateJun 30, 2017

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/926
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In preparation for etch processing a semiconductor chip having areas of little or no pattern and areas that are heavily patterned, adding non-operative patterns to the areas having little or no pattern so that the overall pattern density is about the same across the chip.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.