Method for fabricating flash memory cells
US5899718A · kind A · utility
7Cited by
9References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 20, 1997 |
| Grant date | May 4, 1999 |
| Priority date | — |
| Expiry date | May 20, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0411
Abstract
A method for fabricating flash memory cells having a DDD structure that prevents leakage current during data erasure, that does not require a high temperature drive-in process, and that easily combines with other logic processes. The method for fabricating the flash memory cells utilizes ion implantation through contact windows to establish heavily doped source and drain regions inside previously formed deeply doped source and drain regions to construct the DDD structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.