Plasma process chamber
US5900064A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 1, 1997 |
| Grant date | May 4, 1999 |
| Priority date | — |
| Expiry date | May 1, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/915
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process chamber (14) for processing a substrate (12) in a plasma, comprises a support for supporting the substrate having a surface with a perimeter (32). A gas distributor is provided for distributing process gas into the chamber (14). A plasma generator (40) is used to generate a plasma comprising plasma species from the process gas. A plurality of electrical ground pathways (80) around the perimeter (32) of the substrate (12) are spaced apart, electrically isolated from one another, and provide electrical paths to ground for the charge carried by the plasma species. Preferably, the ground pathways (80) extend through a dielectric surface (70) abutting and extending substantially continuously around the perimeter (32) of the substrate (12).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.