Plasma etching method and apparatus
US5900162A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 1991 |
| Grant date | May 4, 1999 |
| Priority date | — |
| Expiry date | Jul 26, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a plasma etching method and apparatus, and more particularly to a plasma etching method and apparatus which are well suited for etching the samples of semiconductor device substrates, etc. In cooling a sample to a temperature not higher than 0.degree. C. which is a minimum temperature of water and subjecting the sample to an etching process with a gas plasma, an acceleration voltage which accelerates ions in the gas plasma toward the sample is repeatedly changed, whereby in a process based on low-temperature etching, an etching process producing no residue, being anisotropic and being highly selective is realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.