PN-diode of SiC and a method for production thereof
US5902117A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 1997 |
| Grant date | May 11, 1999 |
| Priority date | — |
| Expiry date | May 21, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
Abstract
A pn-diode of SiC has a first emitter layer part doped with first dopants having a low ionization energy and a second part designed as a grid and having portions extending vertically from above and past the junction between the drift layer and the first part and being laterally separated from each other by drift layer regions for forming a pn-junction by the first part and the drift layer adjacent such portions at a vertical distance from a lower end of the grid portions. The different parameters of the device are selected to allow a depletion of the drift layer in the blocking state form a continuous depleted region between the grid portions, to thereby screen off the high electric field at the pn-junction so that it will not be exposed to high electrical fields.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.