Method of depositing amorphous silicon based films having controlled conductivity
US5902650A · kind A · utility
25Cited by
1References
21Claims
0Family size
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Key dates
| Filing date | Jul 11, 1995 |
| Grant date | May 11, 1999 |
| Priority date | — |
| Expiry date | Jul 11, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/24
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing an amorphous silicon based film that has controlled resistivity in between that of an intrinsic amorphous silicon and an n.sup.+ doped amorphous silicon on a substrate for an electronic device by a chemical vapor deposition process or a plasma-enhanced chemical vapor deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.