Stray magnetic shielding for a non-volatile MRAM
US5902690A · kind A · utility
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15Claims
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Key dates
| Filing date | Feb 25, 1997 |
| Grant date | May 11, 1999 |
| Priority date | — |
| Expiry date | Feb 25, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1164
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile magneto-resistive memory positioned on a semiconductor substrate is shielded from stray magnetic fields by a passivation layer partially or completely surrounding the non-volatile magneto-resistive memory. The passivation layer includes non-conductive ferrite materials, such as Mn--Zn-Ferrite, Ni--Zn-Ferrite, MnFeO, CuFeO, FeO, or NiFeO, for shielding the non-volatile magneto-resistive memory from stray magnetic fields. The non-conductive ferrite materials may also be in the form of a layer which focuses internally generated magnetic fields on the non-volatile magneto-resistive memory to reduce power requirements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.