Low temperature-deposited passivation film over semiconductor device
US5903047A · kind A · utility
6Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 1997 |
| Grant date | May 11, 1999 |
| Priority date | — |
| Expiry date | Feb 19, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a composite passivation film deposited at low temperatures (<150.degree. C.). A hydrogenated amorphous silicon nitride (a-SiN.sub.x :H) film is formed over a semiconductor device. Then a very thin layer (>6.4 nm) of an amorphous silicon hydrogen (a-Si:H) film is formed over the a-SiN.sub.x :H film. Such a composite passivation film can prevent semiconductor devices from oxidation due to percolation of moisture, and maintain the electric properties and stability of the semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.