Method for removing fluorinated photoresist layers from semiconductor substrates
US5904154A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1997 |
| Grant date | May 18, 1999 |
| Priority date | — |
| Expiry date | Jul 24, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for removing from a patterned silicon containing dielectric layer a patterned partially fluorinated photoresist layer employed in patterning the patterned silicon containing dielectric layer. There is first formed over a semiconductor substrate a metal contact layer having a silicon containing dielectric layer formed thereover. There is then formed upon the silicon containing dielectric layer a patterned photoresist layer. There is then formed by use of a reactive ion etch (RIE) plasma etch method employing a fluorine containing etchant a via through the silicon containing dielectric layer to form a patterned silicon containing dielectric layer reaching the metal contact layer. The reactive ion etch (RIE) plasma etch method simultaneously forms from the patterned photoresist layer a partially fluorinated patterned photoresist layer comprising a patterned fluorinated surface layer of the partially fluorinated patterned photoresist layer and a patterned non-fluorinated underlying remainder layer of the partially fluorinated patterned photoresist layer. The reactive ion etch (RIE) plasma etch method also simultaneously forms upon the sidewalls of the via a metal-polymer resid…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.