Methods and apparatus for reducing charging during plasma processing
US5904571A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 1996 |
| Grant date | May 18, 1999 |
| Priority date | — |
| Expiry date | Jun 28, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/004
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus and method in a plasma processing chamber for reducing charging of a wafer is described. A plasma generating element is configured to cause a plasma including ions and free radicals to be formed in a plasma generating region. A plasma diffusion region is configured so that plasma generated in the plasma generating region can diffuse through the plasma diffusion region. A conductive grid is positioned within the plasma diffusion region between the wafer and the plasma generating region. The conductive grid includes a mesh which is configured to trap a portion of the ions so that a portion of the ions are prevented from diffusing through the diffusion region to reach the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.