Use of borophosphorous tetraethyl orthosilicate (BPTEOS) to improve isolation in a transistor array
US5908308A · kind A · utility
5Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 26, 1997 |
| Grant date | Jun 1, 1999 |
| Priority date | — |
| Expiry date | Nov 26, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Controlling the thickness of borophosphorous tetraethyl orthosilicate (BPTEOS) used as all or part of the first inter-layer dielectric (ILD0) in manufacturing a semiconductor device containing an array of transistors to control the field leakage between transistors. Reducing field leakage enables the thickness of field oxide, typically used to reduce field leakage, to be reduced to increase device density in the transistor array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.