Semiconductor device fabrication
US5908312A · kind A · utility
27Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 1997 |
| Grant date | Jun 1, 1999 |
| Priority date | — |
| Expiry date | May 28, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of preventing diffusion penetration of the dopant used to dope polysilicon gate material in a MOSFET is disclosed. Atomic nitrogen is introduced into the substrate prior to gate oxide growth. The nitrogen later diffuses upward into the gate oxide and blocks subsequent ion implanted gate dopants from penetrating to the substrate. Low dosages of atomic nitrogen implantation, while not significantly affecting gate oxide growth rate, produce significant improvements in the damage immunity of thin gate oxides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.