Bonded silicon carbide parts in a plasma reactor
US5910221A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 18, 1997 |
| Grant date | Jun 8, 1999 |
| Priority date | — |
| Expiry date | Jun 18, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/914
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma reactor, for example, for processing a semiconductor wafer, in which parts of the chamber are formed of multiple pieces of silicon carbide that have been bonded together. The bonding may be performed by diffusion bonding or by using a bonding agent such as polyimide. These silicon carbide parts typically face and define a plasma region. Preferably, the surface facing the plasma is coated with a silicon carbide film, such as that deposited by chemical vapor deposition, which is more resistant to erosion by the plasma. Advantageously, the different parts are formed with different electrical resistivities consistent with forming an advantageous plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.