Robert Wu
28Patents
20h-index
61Co-inventors
84Inventor score
Filing activity: Apr 25, 1990 → Mar 21, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6074512A | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners | Electricity | 189 | Expired |
| US5605637A | Adjustable dc bias control in a plasma reactor | Electricity | 147 | Expired |
| US6308654A | Inductively coupled parallel-plate plasma reactor with a conical dome | Electricity | 146 | Expired |
| US5891350A | Adjusting DC bias voltage in plasma chambers | Electricity | 96 | Expired |
| US6776873B1 | Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers | Chemistry; Metallurgy | 86 | Expired |
| US5904778A | Silicon carbide composite article particularly useful for plasma reactors | Emerging Cross-Sectional Technologies | 85 | Expired |
| US5110712A | Incorporation of dielectric layers in a semiconductor | Electricity | 80 | Expired |
| US6074959A | Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide | Electricity | 74 | Expired |
| US6009830A | Independent gas feeds in a plasma reactor | Electricity | 70 | Expired |
| US5176790A | Process for forming a via in an integrated circuit structure by etching through an insulation layer while inhibiting sputtering of underlying metal | Electricity | 67 | Expired |
| US5514247A | Process for plasma etching of vias | Electricity | 59 | Expired |
| US5607542A | Inductively enhanced reactive ion etching | Electricity | 51 | Expired |
| US5910221A | Bonded silicon carbide parts in a plasma reactor | Emerging Cross-Sectional Technologies | 34 | Expired |
| US5560780A | Protective coating for dielectric material on wafer support used in integrated circuit processing apparatus and method of forming same | Electricity | 34 | Expired |
| US5585012A | Self-cleaning polymer-free top electrode for parallel electrode etch operation | Emerging Cross-Sectional Technologies | 33 | Expired |
| US5865937A | Broad-band adjustable power ratio phase-inverting plasma reactor | Electricity | 33 | Expired |
| US6183655A | Tunable process for selectively etching oxide using fluoropropylene and a hydrofluorocarbon | Electricity | 33 | Expired |
| US5965463A | Silane etching process | Electricity | 29 | Expired |
| US5729423A | Puncture resistant electrostatic chuck | Emerging Cross-Sectional Technologies | 26 | Expired |
| US5986875A | Puncture resistant electrostatic chuck | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6454898B1 | Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners | Electricity | 17 | Expired |
| US6221782A | Adjusting DC bias voltage in plasma chamber | Electricity | 17 | Expired |
| US6379574B1 | Integrated post-etch treatment for a dielectric etch process | Electricity | 15 | Expired |
| US6432318B1 | Dielectric etch process reducing striations and maintaining critical dimensions | Electricity | 13 | Expired |
| US6513452B2 | Adjusting DC bias voltage in plasma chamber | Electricity | 13 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.