Method of manufacturing silicon monocrystal, and seed crystal used in the method
US5911822A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 1998 |
| Grant date | Jun 15, 1999 |
| Priority date | — |
| Expiry date | Jan 15, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/911
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method of manufacturing a silicon monocrystal using the Czochralski method, there is used a seed crystal whose tip end has a sharp-pointed shape or a truncation thereof. The tip end of the seed crystal is gently brought into contact with the silicon melt, and the seed crystal is then lowered at a low speed in order to melt the tip end portion of the seed crystal until the size of the tip portion increases to a desired value. Subsequently, the seed crystal is slowly pulled upwardly in order to grow a silicon monocrystalline ingot having a desired diameter without performing necking operation. This method enables a heavy silicon monocrystal to be pulled quite simply without performance of necking operation, while eliminating the necessity of using a complicated apparatus such as a crystal holding mechanism.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.