Inventor · Mishima, JP

Masanori Kimura

92Patents
15h-index
108Co-inventors
87Inventor score

Filing activity: Aug 4, 1975 → Nov 23, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US5968264A Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same Emerging Cross-Sectional Technologies 65 Expired
US5646796A Apparatus and method for recording and reproducing topic data with digital video and audio data Electricity 65 Expired
US6565507B2 Flexible tube, and method for manufacturing same Performing Operations; Transporting 51 Expired
US6583840B1 Liquid crystal display element with comb electrodes having reflective projections and producing method thereof Physics 49 Expired
US5728211A Silicon single crystal with low defect density and method of producing same Chemistry; Metallurgy 39 Expired
US6963335B2 Active matrix type display apparatus method for driving the same, and display element Physics 27 Expired
US6261361A Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it Emerging Cross-Sectional Technologies 26 Expired
US5297928A Centrifugal compressor Mechanical Engineering; Lighting; Heating 26 Expired
US6909415B2 Display unit and drive method therefor Physics 22 Expired
US6077343A Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it Emerging Cross-Sectional Technologies 22 Expired
US6801293B1 Method for manufacturing an in-plane electric field mode liquid crystal element Physics 21 Expired
US6843847B1 Silicon single crystal wafer and production method thereof and soi wafer Electricity 19 Expired
US6048395A Method for producing a silicon single crystal having few crystal defects Chemistry; Metallurgy 18 Expired
US6900852B2 Active matrix liquid crystal display element Physics 16 Expired
US6548035B1 Silicon single crystal wafer for epitaxial wafer, epitaxial wafer, and methods for producing the same and evaluating the same Electricity 15 Expired
US6334896B1 Single-crystal silicon wafer having few crystal defects and method for manufacturing the same Chemistry; Metallurgy 15 Expired
US5911822A Method of manufacturing silicon monocrystal, and seed crystal used in the method Emerging Cross-Sectional Technologies 12 Expired
US7499115B2 Display and its driving method Physics 12 Expired
US6603525B2 Liquid crystal display Physics 12 Expired
US6440324B1 Method for manufacturing piezoelectric ceramic composition, piezoelectric resonator, piezoelectric transformer and piezoelectric actuator, and piezoelectric laminated sintered body Electricity 11 Expired
US6364947B1 Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the same Emerging Cross-Sectional Technologies 11 Expired
US5550354A High-frequency induction heating coil Electricity 11 Expired
US5792255A Manufacturing method of single crystal Emerging Cross-Sectional Technologies 11 Expired
US6965367B2 Display Physics 10 Expired
US6600540B2 Liquid crystal display Physics 10 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.