Method of removing etching residue
US5911835A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1997 |
| Grant date | Jun 15, 1999 |
| Priority date | — |
| Expiry date | Mar 27, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/24
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A (method using a composition) for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.