Semiconductor device and method for producing the same
US5915174A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1995 |
| Grant date | Jun 22, 1999 |
| Priority date | — |
| Expiry date | Sep 29, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The solution (for example, a nickel acetate solution) containing a metal element such as nickel which accelerates the crystallization of silicon is applied to an amorphous silicon film by spin coating using a mask, to retain nickel in contact with the surface of the amorphous silicon film. Then, heating treatment is performed to crystallize selectively the amorphous silicon film, so that an amorphous region and a crystalline region are formed in the silicon film. In this state, the silicon film is heated to diffuse the metal element from the crystalline region to the amorphous region, thereby decreasing a concentration of the metal element in the crystalline region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.