Control of chemical-mechanical polishing rate across a substrate surface for a linear polisher
US5916012A · kind A · utility
84Cited by
11References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1997 |
| Grant date | Jun 29, 1999 |
| Priority date | — |
| Expiry date | Jun 25, 2017 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B49/16
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A technique for controlling a polishing rate across a substrate surface when performing CMP, in order to obtain uniform polishing of the substrate surface. A support housing which underlies a polishing pad includes a plurality of openings for dispensing a pressurized fluid. The openings are arranged into a pre-configured pattern for dispensing the fluid to the underside of the pad opposite the substrate surface being polished. The openings are configured into a number of groupings, in which a separate channel is used for each grouping so that fluid pressure for each group of openings can be separately and independently controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.