Process for forming a semiconductor device with an antireflective layer

US5918147A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Stanley M. Filipiak · Pflugerville, US
• Ted R. White · Austin, US
• T. P. Ong · Austin, US
• Jung-Hui Lin · Austin, US
• Wayne M. Paulson · Chandler, US
• Bernard J. Roman · Austin, US

Key dates

• Filing date: Mar 29, 1995
• Grant date: Jun 29, 1999
• Expiry date: Mar 29, 2015

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32133
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Antireflective layers (54, 86, and 109) have been developed that have discrete portions (541, 542, 861, 862, 863, 1091, and 1092). The discrete portions (541, 542, 861, 862, 863, 1091, and 1092) allow the antireflective layers (54, 86, and 109) to be used in many instances where using a single layer of uniform composition would be difficult or impossible. Alternatively, a single antireflective layer with a continuously graded composition can be used.