Reducing reverse short-channel effect with light dose of P with high dose of as in n-channel LDD
US5920104A · kind A · utility
11Cited by
2References
7Claims
0Family size
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Key dates
| Filing date | Sep 3, 1997 |
| Grant date | Jul 6, 1999 |
| Priority date | — |
| Expiry date | Sep 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/605
Abstract
Submicron nLDD CMOS logic devices with improved current drive and reduced reverse short-channel effects having heavily doped As and lightly doped P nLDD region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.