Method for gaseous substrate support
US5920797A · kind A · utility
13Cited by
6References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 3, 1996 |
| Grant date | Jul 6, 1999 |
| Priority date | — |
| Expiry date | Dec 3, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of reducing stress on a substrate in a thermal processing chamber. The method includes the steps of supporting a first portion of a substrate by means of contacting the same such that a second portion of the substrate is not contacted, part of the second portion forming one wall of a cavity, and flowing a gas into the cavity such that the pressure of the gas exerts a force on the second portion to at least partially support the second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.