Reliable low resistance strap for trench storage DRAM cell using selective epitaxy
US5923971A · kind A · utility
18Cited by
13References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1996 |
| Grant date | Jul 13, 1999 |
| Priority date | — |
| Expiry date | Oct 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/038
Abstract
Strap resistance, surface strap shorts and wordline capacitance can be reduced by providing a selectively grown silicon strap which tapers away from spacer nitride and has less contact with spacer nitride. In addition the strap is optionally doped with an arsenic implant which reduces resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.