Apparatus and method for attaining repeatable temperature versus time profiles for plasma heated interactive parts used in mass production plasma processing
US5925212A · kind A · utility
24Cited by
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31Claims
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Key dates
| Filing date | Sep 5, 1995 |
| Grant date | Jul 20, 1999 |
| Priority date | — |
| Expiry date | Sep 5, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32871
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The temperatures of scavenger-emitting kit parts in a high-density plasma (HDP) etching system are elevated to or close to respective steady state equilibrium temperatures so that scavenger chemistry and rates remain substantially the same on a wafer-to-wafer basis. A relatively inert warm-up plasma is turned on within the HDP chamber during idle time periods that precede or occur between executions of a predefined plasma-processing recipe so as to raise the temperatures of chamber-internal kit parts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.