Method of producing smooth titanium nitride films having low resistivity
US5925225A · kind A · utility
23Cited by
12References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1997 |
| Grant date | Jul 20, 1999 |
| Priority date | — |
| Expiry date | Mar 27, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7685
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The resistivity of titanium nitride films is reduced, by about 40% (to less than about 60 .mu. Ohm-cm), for example; and, the film surface roughness is reduced, by about 45% (to less than 6 .ANG.) by using a combination of particular process conditions during deposition of the film by an ion-deposition sputtering process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.