Seshadri Ramaswami
39Patents
13h-index
53Co-inventors
84Inventor score
Filing activity: Dec 15, 1992 → Apr 12, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6139701A | Copper target for sputter deposition | Chemistry; Metallurgy | 44 | Expired |
| US5456756A | Holding apparatus, a metal deposition system, and a wafer processing method which preserve topographical marks on a semiconductor wafer | Electricity | 42 | Expired |
| US5451545A | Process for forming stable local interconnect/active area silicide structure VLSI applications | Emerging Cross-Sectional Technologies | 41 | Expired |
| US6086725A | Target for use in magnetron sputtering of nickel for forming metallization films having consistent uniformity through life | Electricity | 30 | Expired |
| US5882399A | Method of forming a barrier layer which enables a consistently highly oriented crystalline structure in a metallic interconnect | Electricity | 29 | Expired |
| US5614446A | Holding apparatus, a metal deposition system, and a wafer processing method which preserve topographical marks on a semiconductor wafer | Electricity | 28 | Expired |
| US6627542B1 | Continuous, non-agglomerated adhesion of a seed layer to a barrier layer | Electricity | 28 | Expired |
| US5925225A | Method of producing smooth titanium nitride films having low resistivity | Electricity | 23 | Expired |
| US6001227A | Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target | Emerging Cross-Sectional Technologies | 22 | Expired |
| US6420260B1 | Ti/Tinx underlayer which enables a highly <111> oriented aluminum interconnect | Electricity | 19 | Expired |
| US6599399B2 | Sputtering method to generate ionized metal plasma using electron beams and magnetic field | Electricity | 18 | Expired |
| US6391163B1 | Method of enhancing hardness of sputter deposited copper films | Electricity | 14 | Expired |
| US6046100A | Method of fabricating a fabricating plug and near-zero overlap interconnect line | Electricity | 13 | Expired |
| US6228186A | Method for manufacturing metal sputtering target for use in DC magnetron so that target has reduced number of conduction anomalies | Emerging Cross-Sectional Technologies | 11 | Expired |
| US6475356B1 | Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma | Electricity | 10 | Expired |
| US5539247A | Selective metal via plug growth technology for deep sub-micrometer ULSI | Electricity | 9 | Expired |
| US6059872A | Smooth titanium nitride films having low resistivity | Electricity | 8 | Expired |
| US5365111A | Stable local interconnect/active area silicide structure for VLSI applications | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6126791A | Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5453402A | Selective metal via plug growth technology for deep sub-micrometer ULSI | Electricity | 5 | Expired |
| US6171455A | Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6149777A | Method of producing smooth titanium nitride films having low resistivity | Electricity | 4 | Expired |
| US8940619B2 | Method of diced wafer transportation | Electricity | 3 | Active |
| US6899799B2 | Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma | Electricity | 3 | Expired |
| US6455921B1 | Fabricating plug and near-zero overlap interconnect line | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.