Method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition
US5928732A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 1995 |
| Grant date | Jul 27, 1999 |
| Priority date | — |
| Expiry date | Apr 10, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24942
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing silicon oxy-nitride films is provided by utilizing a reactant gas mixture of silane, nitrous oxide and nitrogen at a low deposition temperature of less than 250.degree. C. by flowing the reactant gas mixture through a gas inlet manifold which is also an upper electrode in a plasma-enhanced chemical vapor deposition chamber. The gas inlet manifold is the upper plate of a parallel plate plasma chamber for communicating the reactant gas into the chamber. The plate has a plurality of apertures, each comprising an outlet at a chamber or processing side of the plate and an inlet spaced from the processing side, with the outlet being larger than the inlet for enhancing the dissociation and reactivity of the gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.