Jeff Olsen
5Patents
5h-index
11Co-inventors
52Inventor score
Filing activity: Apr 10, 1995 → May 3, 2000
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6024044A | Dual frequency excitation of plasma for film deposition | Chemistry; Metallurgy | 88 | Expired |
| US5928732A | Method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition | Emerging Cross-Sectional Technologies | 34 | Expired |
| US6857387B1 | Multiple frequency plasma chamber with grounding capacitor at cathode | Electricity | 29 | Expired |
| US6207304A | Method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition | Emerging Cross-Sectional Technologies | 16 | Expired |
| US6352910B1 | Method of depositing amorphous silicon based films having controlled conductivity | Chemistry; Metallurgy | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.