MMIC semiconductor device with WN.sub.x capacitor electrode
US5929473A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 1997 |
| Grant date | Jul 27, 1999 |
| Priority date | — |
| Expiry date | Apr 15, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/813
Abstract
An SiO.sub.2 film and a first wiring layer are arranged in this order on a GaAs substrate. A capacitor is formed on the first wiring layer. The capacitor includes a lower electrode which has a multi-layer structure consisting of a Ti layer, an Mo layer, and a Pt layer in this order from underside. The capacitor also includes a dielectric film made of strontium titanate. The capacitor further includes an upper electrode which has a multi-layer structure consisting of a WN.sub.x layer (120 nm) and a W layer (300 nm) in this order from underside. That surface of the upper electrode, which is in contact with the dielectric film, is defined by the tungsten nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.