Complementary Si/SiGe heterojunction bipolar technology
US5930635A · kind A · utility
37Cited by
6References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 1997 |
| Grant date | Jul 27, 1999 |
| Priority date | — |
| Expiry date | May 2, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0119
Abstract
A method of manufacturing truly complementary bipolar transistors on a common substrate. The method results in the fabrication of vertical NPN and PNP transistors which have an identical structure and mode of operation, with both devices operating in the downward direction. The inventive method permits independent control of the characteristics of the two devices, producing a closely matched performance for both devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.