Reduction of contact size utilizing formation of spacer material over resist pattern
US5932491A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 1997 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Feb 6, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a sidewall aligned contact structure without a hardmask layer. A semiconductor region is provided having an active area at an upper surface. An insulating layer is formed having an upper surface over the active area. Using a photo-patterned organic mask, a gross contact opening is etched in the insulating layer over the active area. The gross contact opening extends downward from the upper surface and partially through the insulating layer. A conformal layer of material is deposited at low temperature over the patterned mask as well as sidewalls and a bottom surface of the gross contact opening The conformal layer comprises a material that is differentially etchable with respect to the photomask and preferably etches similarly to the insulating layer. A portion of the insulating layer at the base of the gross contact opening is exposed. A contact opining is formed in the exposed portion of the insulating layer using the remaining conformal layer as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.