Semiconductor device having doped polycrystalline layer
US5932893A · kind A · utility
138Cited by
1References
41Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 1998 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Feb 3, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulated gate field effect transistor comprises a silicon channel region. The silicon is crystallized by heat annealing while a suitable metal element such as nickel helps the crystallization. The crystallization proceeds in the silicon film laterally from the portion where the nickel is directly introduced. The TFT is arranged in such a manner that the source-drain direction of the TFT is aligned with the direction of the crystal growth or intersects with the crystal growth direction at a desired direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.