Article comprising a capacitor with non-perovskite Sr-Ba-Ti oxide dielectric thin film
US5932905A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Nov 26, 1997 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Nov 26, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Ba--Sr--Ti-oxide dielectric material, with at least 60 atomic percent of the total content of the oxide being Ti, can have relatively high dielectric constant K (>40 at 20.degree. C.) and relatively low second order voltage coefficient a.sub.2 of the dielectric constant (a.sub.2 <100 PPM V.sup.2 at 20.degree. C.). In preferred embodiments the dielectric material has nominal composition (BA.sub.x Sr.sub.y Ti.sub.1--x--y)-oxide, with 1--x--y in the range 0.65-0.90, with both x and y greater than or equal to 0.05. Ba, Sr and Ti together typically comprise at least 99 atomic percent of the total metal content of the dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.