Gregory T. Stauf
19Patents
11h-index
39Co-inventors
72Inventor score
Filing activity: Jul 25, 1994 → Apr 11, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5536323A | Apparatus for flash vaporization delivery of reagents | Emerging Cross-Sectional Technologies | 193 | Expired |
| US5711816A | Source reagent liquid delivery apparatus, and chemical vapor deposition system comprising same | Emerging Cross-Sectional Technologies | 179 | Expired |
| US5705443A | Etching method for refractory materials | Electricity | 104 | Expired |
| US6277436A | Liquid delivery MOCVD process for deposition of high frequency dielectric materials | Electricity | 89 | Expired |
| US5919522A | Growth of BaSrTiO.sub.3 using polyamine-based precursors | Chemistry; Metallurgy | 84 | Expired |
| US7838329B2 | Antimony and germanium complexes useful for CVD/ALD of metal thin films | Electricity | 41 | Active |
| US6900498B2 | Barrier structures for integration of high K oxides with Cu and Al electrodes | Electricity | 18 | Expired |
| US5948322A | Source reagents for MOCVD formation of non-linear optically active metal borate films and optically active metal borate films formed therefrom | Physics | 18 | Expired |
| US6599447B2 | Zirconium-doped BST materials and MOCVD process forming same | Electricity | 17 | Expired |
| US8008117B2 | Antimony and germanium complexes useful for CVD/ALD of metal thin films | Electricity | 14 | Active |
| US8603252B2 | Cleaning of semiconductor processing systems | Electricity | 13 | Active |
| US8268665B2 | Antimony and germanium complexes useful for CVD/ALD of metal thin films | Electricity | 9 | Active |
| US8709863B2 | Antimony and germanium complexes useful for CVD/ALD of metal thin films | Electricity | 9 | Active |
| US5932905A | Article comprising a capacitor with non-perovskite Sr-Ba-Ti oxide dielectric thin film | Emerging Cross-Sectional Technologies | 9 | Expired |
| US8288198B2 | Low temperature deposition of phase change memory materials | Chemistry; Metallurgy | 8 | Active |
| US8877549B2 | Low temperature deposition of phase change memory materials | Chemistry; Metallurgy | 5 | Active |
| US7858525B2 | Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill | Electricity | 4 | Active |
| US8679894B2 | Low temperature deposition of phase change memory materials | Chemistry; Metallurgy | 0 | Active |
| US9219232B2 | Antimony and germanium complexes useful for CVD/ALD of metal thin films | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.