Semiconductor circuit interconnections and methods of making such interconnections
US5932928A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 3, 1997 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Jul 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Interconnections to a semiconductor structure are formed by alternating ribs and contact lines which are substantially orthogonal to each other and separated from one another in two dimensions. Each contact line is connected to conductive contacts which extend through an insulation layer. The ribs, conductive contacts and contact lines are produced from a conductive layer formed over the insulation layer after the insulation layer has been masked and etched. The ribs are isolated from the contact lines and connected conductive contacts by etching the ribs to a depth below the surface of the insulation layer upon which the contact lines are located. The ribs and conductive contacts can be formed over conductive plugs which are preformed through an insulation layer formed over the semiconductor structure. The ribs, conductive contacts and conductive plugs can also be formed together. A mask is formed between bottom and top insulating layers to locate the conductive plugs. The top insulation layer is masked and etched to form the trenches and contact openings with openings through the bottom insulation layer being etched through the mask which prevents the bottom insulation layer from…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.