Electron sources utilizing patterned negative electron affinity photocathodes
US5932966A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Dec 9, 1997 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Dec 9, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31779
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron source includes a negative electron affinity photocathode on a light-transmissive substrate and a light beam generator for directing a light beam through the substrate at the photocathode for exciting electrons into the conduction band. The photocathode has at least one active area for emission of electrons with dimensions of less than about two micrometers. The electron source further includes electron optics for forming the electrons into an electron beam and a vacuum enclosure for maintaining the photocathode at high vacuum. The photocathode is patterned to define emission areas. A patterned mask may be located on the emission surface of the active layer, may be buried within the active layer or may be located between the active layer and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.