Multi-crown capacitor for high density DRAMS
US5933742A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 6, 1996 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Sep 6, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/043
Abstract
A method of manufacturing multi-crown shape capacitors for use in semiconductor memories. The present invention uses the high etching selectivity between TEOS-oxide and polysilicon to fabricate the capacitor. using HSG-Si as an etching mask to etch the second dielectric layer to form dielectric pillars. An etching process is performed using the dielectric pillars as a mask to etching a portion of the first conductive layer and to etch away the remaining HSG-Si. Then side wall spacer are formed on the side walls of the dielectric pillars. Next, a selective etching process is used to define a multi-crown shape structure. Utilizing the pillars as a mold, the present invention can be used to form the multi-crown shaped structure to increase the surface area of the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.