Methods of making and using a chemical-mechanical polishing slurry that reduces wafer defects
US5934978A · kind A · utility
24Cited by
13References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 15, 1997 |
| Grant date | Aug 10, 1999 |
| Priority date | — |
| Expiry date | Aug 15, 2017 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/02
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method of making a chemical-mechanical polishing slurry includes mixing a ferric salt oxidizer with a solution to produce a mixture with a dissolved ferric salt oxidizer, filtering the mixture to remove most preexisting particles therein that exceed a selected particle size, adding a suspension agent to the mixture, and adding abrasive particles to the mixture after filtering the mixture. Advantageously, when polishing occurs, scratching by the preexisting particles is dramatically reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.