Patent · US Expired

Method of oxidation of semiconductor wafers in a rapid thermal processing (RTP) system

US5935650A · kind A · utility

16Cited by

5References

13Claims

0Family size

Inventors

Wilfried Lerch · Blaustein, DE
Georg Roters · Schneverdingen, DE
Peter Muenzinger · Neu-Ulm, DE
Roland Mader · Rüdesheim am Rhein, DE

Key dates

Filing date	Oct 17, 1997
Grant date	Aug 10, 1999
Priority date	—
Expiry date	Oct 17, 2017

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02255
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of producing a film on the surface of a semiconductor wafer in an RTP system, comprising: a) rapidly processing the wafer at a first temperature T.sub.1 in an atmosphere containing a substantial vapor pressure of a first reactive gas; then b) rapidly processing the wafer at a second temperature T.sub.2 in an atmosphere substantially free of the first reactive gas is described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.