Manufacturing method for membrane lithography mask with mask fields

US5935739A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Thomas Bayer · Igersheim, DE
• Johann Greschner · Neckartenzlingen, DE
• Samuel Kalt · Reutlingen, DE
• Klaus Meissner · Herrenberg, DE
• Hans C. Pfeiffer · Ridgefield, US

Key dates

• Filing date: Mar 17, 1998
• Grant date: Aug 10, 1999
• Expiry date: Mar 17, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/30604
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The invention relates to a manufacturing method for a membrane mask suitable for particle beams with mask fields, which are bounded by thin support walls. The deep plasma etching for the formation of the support walls is halted shortly before reaching the membrane and the last .mu.m before the membrane removed by wet-chemical etching. A high etch selectivity can be achieved using an alkaline etching solution. The support walls 1 are turned by 45.degree. to the (110) direction or oriented parallel to the (100) plane, so that the structures restricted by (111) planes are avoided.