Interconnect structure and method to achieve unlanded vias for low dielectric constant materials
US5935868A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 1997 |
| Grant date | Aug 10, 1999 |
| Priority date | — |
| Expiry date | Mar 31, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an interconnect structure using a low dielectric constant material as an intralayer dielectric is described. In one embodiment, the present inventive method comprises the following steps. A conductive structure that is surrounded by a low dielectric constant material on its side surfaces is formed. A first inorganic insulator is formed over at least a portion of the low dielectric constant material. A second inorganic insulator is formed over the first inorganic insulator. A photoresist layer is deposited and then patterned to form an unlanded via in the second inorganic insulator. The second inorganic insulator and a portion of the first inorganic insulator are etched in order to form the unlanded via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.