Silicon nitride deposition method
US5939333A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 1996 |
| Grant date | Aug 17, 1999 |
| Priority date | — |
| Expiry date | May 30, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon nitride deposition method includes providing a substrate surface including one or more component surfaces. At least a monolayer of silicon is predeposited on the one or more component surfaces of the substrate surface resulting in a substantially native oxide free uniform predeposited silicon substrate surface. Thereafter, a silicon nitride layer is deposited on the predeposited silicon substrate surface after the silicon predeposition. Further, another silicon nitride deposition method includes providing a silicon based substrate surface. The substrate surface is nitridated in an atmosphere of dimethylhydrazine, and thereafter, a silicon nitride layer is deposited on the nitridated surface. The nitridation of the substrate surface results in a thickness less than three monolayers of silicon nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.