Method of making a semiconductor device having high performance gate electrode structure
US5940698A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1997 |
| Grant date | Aug 17, 1999 |
| Priority date | — |
| Expiry date | Dec 1, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a high performance gate electrode structure and a process of fabricating such a device. A semiconductor device in accordance with an embodiment of the invention is formed by forming a gate insulating layer is over a substrate. A diffusion barrier layer is formed over the gate insulating layer and a trench is formed in the diffusion barrier layer. In the trench, a metal gate electrode is formed. The diffusion barrier layer impedes diffusion of the metal gate electrode into the gate insulating layer during, for example, subsequent processing. The gate insulating layer, the barrier layer, and the gate electrode may, for example, be formed from cobalt niobate, tantalum silicon nitride, and copper, respectively. The copper gate electrode and cobalt gate insulating layer can, for example, increase the speed of the semiconductor device as compared to conventional transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.