Inventor · Austin, TX, US

Mark C. Gilmer

82Patents
19h-index
8Co-inventors
66Inventor score

Filing activity: Dec 10, 1996 → Jun 7, 2000

Most-cited inventions

PatentTitleAreaCited byStatus
US6373113B1 Nitrogenated gate structure for improved transistor performance and method for making same Electricity 76 Expired
US6048766A Flash memory device having high permittivity stacked dielectric and fabrication thereof Electricity 64 Expired
US5937308A Semiconductor trench isolation structure formed substantially within a single chamber Electricity 58 Expired
US5840610A Enhanced oxynitride gate dielectrics using NF.sub.3 gas Electricity 55 Expired
US6169306A Semiconductor devices comprised of one or more epitaxial layers Electricity 52 Expired
US6096659A Manufacturing process for reducing feature dimensions in a semiconductor Emerging Cross-Sectional Technologies 50 Expired
US5907780A Incorporating silicon atoms into a metal oxide gate dielectric using gas cluster ion beam implantation Electricity 46 Expired
US6043157A Semiconductor device having dual gate electrode material and process of fabrication thereof Electricity 40 Expired
US5888870A Memory cell fabrication employing an interpoly gate dielectric arranged upon a polished floating gate Electricity 39 Expired
US6265749A Metal silicide transistor gate spaced from a semiconductor substrate by a ceramic gate dielectric having a high dielectric constant Electricity 34 Expired
US6051865A Transistor having a barrier layer below a high permittivity gate dielectric Electricity 31 Expired
US6110784A Method of integration of nitrogen bearing high K film Electricity 31 Expired
US6051487A Semiconductor device fabrication using a sacrificial plug for defining a region for a gate electrode Electricity 26 Expired
US6124620A Incorporating barrier atoms into a gate dielectric using gas cluster ion beam implantation Electricity 26 Expired
US6057584A Semiconductor device having a tri-layer gate insulating dielectric Electricity 25 Expired
US6197668A Ferroelectric-enhanced tantalum pentoxide for dielectric material applications in CMOS devices Electricity 24 Expired
US6002150A Compound material T gate structure for devices with gate dielectrics having a high dielectric constant Electricity 24 Expired
US6100204A Method of making ultra thin gate oxide using aluminum oxide Electricity 22 Expired
US5940698A Method of making a semiconductor device having high performance gate electrode structure Electricity 20 Expired
US5990493A Diamond etch stop rendered conductive by a gas cluster ion beam implant of titanium Electricity 19 Expired
US5821172A Oxynitride GTE dielectrics using NH.sub.3 gas Electricity 19 Expired
US5858848A Semiconductor fabrication employing self-aligned sidewall spacers laterally adjacent to a transistor gate Emerging Cross-Sectional Technologies 18 Expired
US5963810A Semiconductor device having nitrogen enhanced high permittivity gate insulating layer and fabrication thereof Electricity 18 Expired
US6165314A Apparatus for performing jet vapor reduction of the thickness of process layers Electricity 17 Expired
US6148832A Method and apparatus for in-situ cleaning of polysilicon-coated quartz furnaces Chemistry; Metallurgy 17 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.