Integrated circuit having, and process providing, different oxide layer thicknesses on a substrate
US5942780A · kind A · utility
46Cited by
10References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 9, 1996 |
| Grant date | Aug 24, 1999 |
| Priority date | — |
| Expiry date | Aug 9, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
An integrated circuit ("IC") having three different oxide layer thicknesses and a process for manufacturing the IC using a single oxide growth step is provided. A first region is formed on a substrate surface with oxidation enhancing properties. A second region is formed on the substrate surface with a dose of nitrogen that retards oxidation. An oxide layer is grown from the first and the second regions and a third region of the substrate such that the first, second, and third regions yield a first oxide layer for the capacitor, a second oxide layer for the read transistor and a third oxide layer for the write transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.