Process for fabricating a metallization structure
US5943601A · kind A · utility
16Cited by
24References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 1997 |
| Grant date | Aug 24, 1999 |
| Priority date | — |
| Expiry date | Apr 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metallization structure is fabricated by depositing an underlayer of a group IVA metal having a thickness of about 90 to about 110 angstroms, and depositing a layer of aluminum and/or an aluminum alloy. The metallization structure obtained exhibits enhanced electromigration and is highly textured and is especially suitable for forming electrical connections or wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.