Method and device for introducing precursors into chamber for chemical vapor deposition
US5945162A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 1996 |
| Grant date | Aug 31, 1999 |
| Priority date | — |
| Expiry date | Jun 17, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4486
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A method is disclosed for introducing into a chemical vapor deposition chamber precursors of elements to be deposited over a heated substrate. The method comprises the steps of maintaining one or more precursors in liquid form or in solution at a pressure higher than the pressure of the chamber; injecting periodically and under control in the deposition chamber precursor droplets each of the droplets having a controllable volume; volatizing the injected precursor droplets to produce evaporated precursors, and conveying toward the substrate the evaporated precursors at a temperature and pressure of the chamber, whereby the evaporated precursors react to produce the elements deposited onto the substrate. A device for performing the same is also disclosed and includes at least one tank containing precursors in liquid form or in solution; means for maintaining each tank at a pressure higher than the pressure of the chamber; at least one controlled injector associated with each tank and provided with control means for periodically injecting controlled amounts of precursor droplets into the deposition chamber; means for volatizing said injected precursor droplets to produce evaporated pr…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.