Inventor · Saint-Martin-d'Hères, FR

Olivier Thomas

39Patents
8h-index
57Co-inventors
78Inventor score

Filing activity: Jun 19, 1986 → May 31, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US8183630B2 Circuit with transistors integrated in three dimensions and having a dynamically adjustable threshold voltage VT Electricity 252 Active
US8013399B2 SRAM memory cell having transistors integrated at several levels and the threshold voltage VT of which is dynamically adjustable Electricity 228 Active
US4726701A Modular shelf assembly Emerging Cross-Sectional Technologies 34 Expired
US7511989B2 Memory cells in double-gate CMOS technology provided with transistors with two independent gates Physics 27 Active
US5945162A Method and device for introducing precursors into chamber for chemical vapor deposition Chemistry; Metallurgy 16 Expired
US8502318B2 SRAM memory cell provided with transistors having a vertical multichannel structure Electricity 12 Active
US8116118B2 Memory cell provided with dual-gate transistors, with independent asymmetric gates Electricity 10 Active
US8969967B2 Self-contained integrated circuit including adjacent cells of different types Electricity 9 Active
US5214926A Device, especially autonomous and portable for extracting heat from a hot source Mechanical Engineering; Lighting; Heating 7 Expired
US9093499B2 Integrated circuit using FDSOI technology, with well sharing and means for biasing oppositely doped ground planes present in a same well Electricity 5 Active
US8710671B2 Multi-level integrated circuit, device and method for modeling multi-level integrated circuits Electricity 5 Active
US9542996B2 Device with SRAM memory cells including means for polarizing wells of memory cell transistors Electricity 4 Active
US7787286B2 SRAM memory with reference bias cell Physics 4 Active
US9508434B2 Programmable-resistance non-volatile memory Physics 4 Active
US8399316B2 Method for making asymmetric double-gate transistors Electricity 3 Active
US9190334B2 SOI integrated circuit comprising adjacent cells of different types Electricity 3 Active
US7812410B2 Suspended-gate MOS transistor with non-volatile operation Electricity 3 Active
US7768821B2 Non-volatile SRAM memory cell equipped with mobile gate transistors and piezoelectric operation Physics 3 Active
US7622983B2 Method and device for adapting the voltage of a MOS transistor bulk Physics 3 Active
US10002664B2 Non-volatile resistive memory cell comprising metal electrodes and a solid electrolyte between the metal electrodes Physics 2 Active
US9449688B2 Device and method for writing data to a resistive memory Physics 2 Active
US11110765B2 Suspension spring saddle Mechanical Engineering; Lighting; Heating 2 Active
US8320198B2 SRAM memory cell with double gate transistors provided means to improve the write margin Physics 2 Active
US7928797B2 Integrated circuit with a power transistor gate bias controlled by the leakage current Electricity 2 Active
US10559355B2 Device and method for writing data to a resistive memory Physics 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.