Method of manufacturing a semiconductor device by doping an active region after formation of a relatively thick oxide layer
US5946581A · kind A · utility
13Cited by
5References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 1997 |
| Grant date | Aug 31, 1999 |
| Priority date | — |
| Expiry date | Jan 8, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76814
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device fabrication process, an active region of the semiconductor device is formed by doping an active region after formation of a relatively thick oxide layer. According to the process, a gate electrode is formed on a substrate and a relatively thick oxide layer is formed over the gate electrode. Portions of the relatively thick oxide layer are removed to expose a region of the substrate adjacent the gate electrode. The exposed region is then doped with a dopant to form an active region. The active region may form an LDD region. The relatively thick oxide layer may comprise a contact formation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.